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Intellectual property

Intellectual property
Domestic or overseas Domestic Form of the I.P Patent
Patent no. US  12/342426 Registration no. 8058676
Name of the invention Spin transistor using double carrier supply layer structure
Name of the invention(English)
I.P sector Machine
Image file[C]
Attached file
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Commercialization information

Commercialization information
I.P Abstract & Summary A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer.
Trade type of the I.P Rights transfer ( Overall )
10,000,000KRW ~ 10,000,000KRW
I.P stage Idea stage

#Machine, #Spin, #Transistor, #electron, #Gas, #Carrier, #Supply, #Semiconductor